Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
A 0.18 #x003BC;m CMOS Ultra-Wideband Low-Noise Amplifier with High IIP3
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
Show others and affiliations
2005 (English)In: Proceedings of the Seventh IEEE CPMT Conference on High Density Microsystem Design, Packaging and Failure Analysis (HDP'05), 2005, 452-454 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this paper an ultra-wideband low-noise amplifier (LNA) for the frequency range of 3.1 - 9.4 GHz using 0.18 mu m CMOS RF process is introduced. Single-ended single stage LNA structure utilises an input LC-ladder, cascode transistor configuration and LRC-feedback to realise an ultra broad bandwidth response. In operating frequency range noise figure (NF) of 3.1 dB and gain of 10.6 dB were achieved along with high linearity (IIP3) even upto 10.9 dBm at 3.1 GHz. With the bias network, the LNA had a total power consumption of 31 mW from 1.8 V supply.

Place, publisher, year, edition, pages
2005. 452-454 p.
Keyword [en]
0.18 micron;1.8 V;10.6 dB;3.1 dB;3.1 to 9.4 GHz;31 mW;CMOS RF process;LRC-feedback;cascode transistor configuration;high IIP3;input LC-ladder;low-noise amplifier;noise figure;power consumption;single stage LNA structure;single-ended LNA structure;ultra broad bandwidth response;ultra-wideband amplifier;CMOS integrated circuits;ladder networks;low noise amplifiers;microwave amplifiers;ultra wideband technology;wideband amplifiers;
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-74190DOI: 10.1109/HDP.2005.251445ISI: 000239707000078Scopus ID: 2-s2.0-42749106602OAI: oai:DiVA.org:kth-74190DiVA: diva2:489282
Conference
8th IEEE CPMT Conference on High Density Microsystem Design and Packaging and Component Failure Analysis (HDP 06). Shanghai Univ, Shanghai, PEOPLES R CHINA. JUN 27, 2005-JUN 30, 2006
Note
QC 20120302Available from: 2012-02-02 Created: 2012-02-02 Last updated: 2012-03-02Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Shen, MeigenDuo, XinzhongZheng, Li-RongTenhunen, Hannu
By organisation
Microelectronics and Information Technology, IMIT
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 39 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf