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Ultrafast luminescence decay in low-temperature MOCVD-grown InGaAs
Semiconductor Physics Institute, Vilnius, Lithuania.
Semiconductor Physics Institute, Vilnius, Lithuania.
KTH, School of Engineering Sciences (SCI). (Laser Physics)
Institute för Optis Forskning.
1994 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 9, 1382-1386 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
UK: Institute of Physics (IOP), 1994. Vol. 9, 1382-1386 p.
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Engineering and Technology
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URN: urn:nbn:se:kth:diva-74858OAI: oai:DiVA.org:kth-74858DiVA: diva2:490122
Note
NR 20140805Available from: 2012-02-03 Created: 2012-02-03 Last updated: 2017-12-08Bibliographically approved

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