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Ultrafast photoconductors from low-temperature MOCVD-Grown GaAs and InGaAs epitaxial layers
Semiconductor Physics Institute, Vilnius, Lithuania.
KTH, School of Engineering Sciences (SCI). (Laser Physics)
Semiconductor Physics Institute, Vilnius, Lithuania.
Semiconductor Physics Institute, Vilnius, Lithuania.
1994 (English)In: Applied Physics A: Materials Science & Processing, ISSN 0947-8396, E-ISSN 1432-0630, Vol. 58, 177-181 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
Germany: Springer Berlin/Heidelberg, 1994. Vol. 58, 177-181 p.
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Engineering and Technology
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URN: urn:nbn:se:kth:diva-74860OAI: oai:DiVA.org:kth-74860DiVA: diva2:490123
Note
NR 20140805Available from: 2012-02-03 Created: 2012-02-03 Last updated: 2017-12-08Bibliographically approved

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