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Electrical and photoelectrical properties of porous silicon diode structures
Semiconductor Physics Institute, Vilnius, Lithuania.
Semiconductor Physics Institute, Vilnius, Lithuania.
Semiconductor Physics Institute, Vilnius, Lithuania.
Semiconductor Physics Institute, Vilnius, Lithuania.
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1993 (English)In: Lithuanian Journal of Physics, ISSN 1648-8504, Vol. 33, 52-62 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
Lithuanian Physical Society , 1993. Vol. 33, 52-62 p.
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-77380OAI: oai:DiVA.org:kth-77380DiVA: diva2:491526
Note
NR 20140805Available from: 2012-02-06 Created: 2012-02-06Bibliographically approved

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Atom and Molecular Physics and Optics

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