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Electrical Properties of Covalently Immobilized Single-Layer Graphene Devices
Portland State University.ORCID iD: 0000-0003-1121-4007
2011 (English)In: Journal of Nanoscience and Nanotechnology, ISSN 1533-4880, E-ISSN 1533-4899, Vol. 11, no 2, 1288-1292 p.Article in journal (Refereed) Published
Abstract [en]

Arrays of covalently immobilized and aligned graphene ribbons have been successfully prepared on silicon wafers. The effect of covalent modification on the electrical properties of the single-layer graphene was investigated. The effective electron field mobility of the constructed FETs, measured at 2700 cm(2)V(-1)s(-1), was higher than that for graphene film directly deposited on SiO(2), possibly due to lower phonon scattering from the substrate surface, implying that the field effect mobilities may be enhanced with proper choice of substrates. The contact resistance between Cr electrodes and the single-layer graphene ribbon was determined to be 1.62 k Omega from the TLM structures.

Place, publisher, year, edition, pages
2011. Vol. 11, no 2, 1288-1292 p.
Keyword [en]
Graphene, Field-Effect Transistors, Covalent Functionalization, Nanostructures
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-77348DOI: 10.1166/jnn.2011.3886ISI: 000287167900055PubMedID: 21456173OAI: oai:DiVA.org:kth-77348DiVA: diva2:492000
Note
QC 20120210Available from: 2012-02-07 Created: 2012-02-06 Last updated: 2017-12-08Bibliographically approved

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