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Precision material modification and patterning with He ions
Harvard University, Department of Physics.
2009 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 27, no 6, 2755-2758 p.Article in journal (Refereed) Published
Abstract [en]

The authors report on the use of a helium ion microscope as a potential technique for precise nanopatterning. Combined with an automated pattern generation system, they demonstrate controlled etching and patterning of materials, giving precise command over the geometery of the modified nanostructure. After the determination of suitable doses, sharp edge profiles and clean etching of areas in materials were observed. In this article they present examples of patterning on SiO(2) and graphene, which is particularly relevant. This technique could be an avenue for precise material modification for future graphene based device fabrication. The technique has the potential to revolutionize the way that very thin, one-atomic layer materials are modified in a controlled and predictable way.

Place, publisher, year, edition, pages
2009. Vol. 27, no 6, 2755-2758 p.
Keyword [en]
etching, graphene, ion beam effects, nanopatterning, nanostructured materials, silicon compounds
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-50559DOI: 10.1116/1.3237113ISI: 000272803400086OAI: diva2:495241
QC 20120216Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-02-16Bibliographically approved

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Lemme, Max C.
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