Precision material modification and patterning with He ions
2009 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 27, no 6, 2755-2758 p.Article in journal (Refereed) Published
The authors report on the use of a helium ion microscope as a potential technique for precise nanopatterning. Combined with an automated pattern generation system, they demonstrate controlled etching and patterning of materials, giving precise command over the geometery of the modified nanostructure. After the determination of suitable doses, sharp edge profiles and clean etching of areas in materials were observed. In this article they present examples of patterning on SiO(2) and graphene, which is particularly relevant. This technique could be an avenue for precise material modification for future graphene based device fabrication. The technique has the potential to revolutionize the way that very thin, one-atomic layer materials are modified in a controlled and predictable way.
Place, publisher, year, edition, pages
2009. Vol. 27, no 6, 2755-2758 p.
etching, graphene, ion beam effects, nanopatterning, nanostructured materials, silicon compounds
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-50559DOI: 10.1116/1.3237113ISI: 000272803400086OAI: oai:DiVA.org:kth-50559DiVA: diva2:495241
QC 201202162012-02-082011-12-062012-02-16Bibliographically approved