Mobility Extraction of UTB n-MOSFETs down to 0.9 nm SOI thickness
2009 (English)In: ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON, NEW YORK: IEEE , 2009, 27-30 p.Conference paper (Refereed)
In this abstract, the impact of series resistance on mobility extraction in conventional and recessed-gate ultra thin body (UTB) n-MOSFETs is investigated. High series resistance leads to an overestimation of the internal source / drain voltage and influences the measurement of the gate to channel capacitance. A specific MOSFET design that includes additional channel contacts and recessed gate technology are used to successfully extract mobility down to 0.9 nm silicon film thickness (4 atomic layers). Quantum mechanical effects are found to shift the threshold voltage and degrade mobility at these extreme scaling limits.
Place, publisher, year, edition, pages
NEW YORK: IEEE , 2009. 27-30 p.
IdentifiersURN: urn:nbn:se:kth:diva-50575DOI: 10.1109/ULIS.2009.4897531ISI: 000266761300007OAI: oai:DiVA.org:kth-50575DiVA: diva2:495244
10th International Conference on Ultimate Integration on Silicon. Aachen, GERMANY. MAR 18-20, 2009
QC 201202092012-02-082011-12-062012-02-09Bibliographically approved