Change search
ReferencesLink to record
Permanent link

Direct link
Mobility Extraction of UTB n-MOSFETs down to 0.9 nm SOI thickness
AMO GmbH, AMICA, Aachen, Germany.
Show others and affiliations
2009 (English)In: ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON, NEW YORK: IEEE , 2009, 27-30 p.Conference paper (Refereed)
Abstract [en]

In this abstract, the impact of series resistance on mobility extraction in conventional and recessed-gate ultra thin body (UTB) n-MOSFETs is investigated. High series resistance leads to an overestimation of the internal source / drain voltage and influences the measurement of the gate to channel capacitance. A specific MOSFET design that includes additional channel contacts and recessed gate technology are used to successfully extract mobility down to 0.9 nm silicon film thickness (4 atomic layers). Quantum mechanical effects are found to shift the threshold voltage and degrade mobility at these extreme scaling limits.

Place, publisher, year, edition, pages
NEW YORK: IEEE , 2009. 27-30 p.
National Category
Nano Technology
URN: urn:nbn:se:kth:diva-50575DOI: 10.1109/ULIS.2009.4897531ISI: 000266761300007OAI: diva2:495244
10th International Conference on Ultimate Integration on Silicon. Aachen, GERMANY. MAR 18-20, 2009
Max Lemme
QC 20120209Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-02-09Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Lemme, Max C.
Nano Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 7 hits
ReferencesLink to record
Permanent link

Direct link