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Gate-Activated Photoresponse in a Graphene p-n Junction
Harvard University.
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2011 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 11, no 10, 4134-4137 p.Article in journal (Refereed) Published
Abstract [en]

We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed, allowing on-off control of photodetection. Photocurrents generated near p-n junctions do not require biasing and can be realized using submicrometer gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.

Place, publisher, year, edition, pages
2011. Vol. 11, no 10, 4134-4137 p.
Keyword [en]
graphene, p-n junction, photo-detection, thermoelectricity
National Category
Nano Technology
URN: urn:nbn:se:kth:diva-50577DOI: 10.1021/nl2019068ISI: 000295667000018OAI: diva2:495249
QC 20120222Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-02-22Bibliographically approved

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Lemme, Max C.
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