Gate-Activated Photoresponse in a Graphene p-n Junction
2011 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 11, no 10, 4134-4137 p.Article in journal (Refereed) Published
We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed, allowing on-off control of photodetection. Photocurrents generated near p-n junctions do not require biasing and can be realized using submicrometer gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.
Place, publisher, year, edition, pages
2011. Vol. 11, no 10, 4134-4137 p.
graphene, p-n junction, photo-detection, thermoelectricity
IdentifiersURN: urn:nbn:se:kth:diva-50577DOI: 10.1021/nl2019068ISI: 000295667000018OAI: oai:DiVA.org:kth-50577DiVA: diva2:495249
QC 201202222012-02-082011-12-062012-02-22Bibliographically approved