POLYSILICON MESOSCOPIC WIRES COATED BY Pd AS H(2) SENSORS
2009 (English)In: PROCEEDINGS OF THE 13TH ITALIAN CONFERENCE ON SENSORS AND MICROSYSTEMS, SINGAPORE: WORLD SCIENTIFIC PUBL CO PTE LTD , 2009, 161-165 p.Conference paper (Refereed)
In this work a novel monocrystalline silicon nanowires array has been investigated and presented as hydrogen sensor, designed and fabricated by employing high resolution microfabrication techniques and featuring a high surface/volume ratio. The nanowires arrays makes up the channel of a MOS system, palladium-silicon dioxide-silicon. Several devices have been fabricated by using a SOI (Silicon On Insulator) substrate, Source and Drain have been geometrically patterned by optical lithography and Boron p-doped. Electron Beam Litography (EBL) defined the MOS channel made up of a nanowires array of different length and width in different transistors. The pads of Source and Drain have been manufactured with an aluminium film deposition. The Gate has been fabricated with a grown silicon oxide layer (17.4 nm) and Palladium has been used as gate contact. Polarizing and exposing the device to H(2)/N(2) cycles at different concentrations some preliminary measurements have been successfully conducted.
Place, publisher, year, edition, pages
SINGAPORE: WORLD SCIENTIFIC PUBL CO PTE LTD , 2009. 161-165 p.
IdentifiersURN: urn:nbn:se:kth:diva-50574ISI: 000263783800027OAI: oai:DiVA.org:kth-50574DiVA: diva2:495254
13th Italian Conference on Sensors and Microsystems, Rome, ITALY, FEB 19-21, 2008
QC 201202162012-02-082011-12-062012-02-16Bibliographically approved