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Comparative study on the impact of TiN and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-kappa dielectrics for CMOS technology
AMO GmbH, AMICA, Aachen, Germany.
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2007 (English)In: Physics of Semiconductors, Pts A and B, 2007, 293-294 p.Conference paper (Refereed)
Abstract [en]

We compare metal oxide semiconductor capacitors, investigating Titanium-Nitride and Molybdenum as gate materials, as well as metal organic chemical vapor deposited ZrO2 and HfO2 as high-kappa dielectrics, respectively. The impact of different annealing steps on the electrical characteristics of the various gate stacks is a further issue. The positive effect of post metallization annealing in forming gas atmosphere as well as observed mid-gap pinning of TiN and Mo metal gates is presented.

Place, publisher, year, edition, pages
2007. 293-294 p.
Keyword [en]
dielectrics, high-k, metal gate, MOCVD, ZrO2, HfO2, TiN, Mo
National Category
Nano Technology
URN: urn:nbn:se:kth:diva-50570DOI: 10.1063/1.2729883ISI: 000246281800143ISBN: 978-0-7354-0397-0OAI: diva2:495258
28th International Conference on the Physics of Semiconductors (ICPS-28) JUL 24-28, 2006 Vienna, AUSTRIA
QC 20120228Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-02-28Bibliographically approved

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Lemme, Max C.
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