Comparative study on the impact of TiN and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-kappa dielectrics for CMOS technology
2007 (English)In: Physics of Semiconductors, Pts A and B, 2007, 293-294 p.Conference paper (Refereed)
We compare metal oxide semiconductor capacitors, investigating Titanium-Nitride and Molybdenum as gate materials, as well as metal organic chemical vapor deposited ZrO2 and HfO2 as high-kappa dielectrics, respectively. The impact of different annealing steps on the electrical characteristics of the various gate stacks is a further issue. The positive effect of post metallization annealing in forming gas atmosphere as well as observed mid-gap pinning of TiN and Mo metal gates is presented.
Place, publisher, year, edition, pages
2007. 293-294 p.
, AIP CONFERENCE PROCEEDINGS, ISSN 0094-243X ; 893
dielectrics, high-k, metal gate, MOCVD, ZrO2, HfO2, TiN, Mo
IdentifiersURN: urn:nbn:se:kth:diva-50570DOI: 10.1063/1.2729883ISI: 000246281800143ISBN: 978-0-7354-0397-0OAI: oai:DiVA.org:kth-50570DiVA: diva2:495258
28th International Conference on the Physics of Semiconductors (ICPS-28) JUL 24-28, 2006 Vienna, AUSTRIA
QC 201202282012-02-082011-12-062012-02-28Bibliographically approved