Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Fabrication of monolithic bidirectional switch (MBS) devices with MOS-controlled emitter structures
AMO GmbH, AMICA, Aachen, Germany.
Show others and affiliations
2006 (English)In: PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2006, 181-184 p.Conference paper, Published paper (Refereed)
Abstract [en]

A novel high-voltage power device, the Monolithic Bidirectional Switch (MBS) is investigated in this work. Planar MBS devices have been fabricated by a self-aligned fabrication process using local oxidation of silicon technique and self-aligned sificidation. Results obtained from electrical characterization are compared with numerical simulations. Using highly transparent universal contacts, bidirectional switching with an excellent on/off current ratio is demonstrated. On-current densities of 75 A/cm(2) at V(on) = 3 V have been achieved even in an exploratory device structure. Simulations further demonstrate the high potential of the MBS for future power electronic systems such as the matrix converter.

Place, publisher, year, edition, pages
2006. 181-184 p.
Series
International Symposium on Power Semiconductor Devices and ICs, ISSN 1063-6854
Keyword [en]
Computer simulation, Electric currents, Electric switches, MOS capacitors, Power electronics, Silicon
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-50569ISI: 000238922500049OAI: oai:DiVA.org:kth-50569DiVA: diva2:495262
Conference
18th International Symposium on Power Semiconductor Devices and ICs JUN 04-08, 2006 Naples, ITALY
Note
QC 20120306Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-03-06Bibliographically approved

Open Access in DiVA

No full text

Search in DiVA

By author/editor
Lemme, Max C.
Nano Technology

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 24 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf