Fabrication of monolithic bidirectional switch (MBS) devices with MOS-controlled emitter structures
2006 (English)In: PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2006, 181-184 p.Conference paper (Refereed)
A novel high-voltage power device, the Monolithic Bidirectional Switch (MBS) is investigated in this work. Planar MBS devices have been fabricated by a self-aligned fabrication process using local oxidation of silicon technique and self-aligned sificidation. Results obtained from electrical characterization are compared with numerical simulations. Using highly transparent universal contacts, bidirectional switching with an excellent on/off current ratio is demonstrated. On-current densities of 75 A/cm(2) at V(on) = 3 V have been achieved even in an exploratory device structure. Simulations further demonstrate the high potential of the MBS for future power electronic systems such as the matrix converter.
Place, publisher, year, edition, pages
2006. 181-184 p.
, International Symposium on Power Semiconductor Devices and ICs, ISSN 1063-6854
Computer simulation, Electric currents, Electric switches, MOS capacitors, Power electronics, Silicon
IdentifiersURN: urn:nbn:se:kth:diva-50569ISI: 000238922500049OAI: oai:DiVA.org:kth-50569DiVA: diva2:495262
18th International Symposium on Power Semiconductor Devices and ICs JUN 04-08, 2006 Naples, ITALY
QC 201203062012-02-082011-12-062012-03-06Bibliographically approved