Investigation of NiAlN as gate-material for submicron CMOS technology
2004 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 76, no 1-4, 354-359 p.Article in journal (Refereed) Published
Nickel-Aluminium-Nitride (NiAlN) is investigated as gate material for submicron CMOS technology for the first time. The MAIN films have been reactively sputtered from a Ni0.5Al0.5 target in a mixture of argon and nitrogen gas. The influence of the reactive gas content and process temperatures on the work function is presented. Electrical properties are extracted from high and low frequency capacitance-voltage measurements (QSCV, HFCV). Resistivity measurements are shown for various process conditions. Interface properties are observed by transmission electron microscopy. Primarily results show NiAlN's suitability for use as gate material in a CMOS replacement gate technology. Fabrication of n-type metal-oxide-semiconductor field effect transistors with a MAIN gates activated at 900 degreesC is demonstrated.
Place, publisher, year, edition, pages
2004. Vol. 76, no 1-4, 354-359 p.
NiAlN, work function, CV-curves, MOSFET, metal gate
IdentifiersURN: urn:nbn:se:kth:diva-50565DOI: 10.1016/j.mee.2004.07.050ISI: 000224562800054OAI: oai:DiVA.org:kth-50565DiVA: diva2:495284
QC 201202172012-02-082011-12-062012-02-17Bibliographically approved