Monolithic Bidirectional Switch (MBS) - A novel MOS-based power device
2005 (English)In: PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2005, 473-476 p.Conference paper (Refereed)
A novel MOS-based power device, the Monolithic Bidirectional Switch (MBS), is investigated in this work. An analytical model is used to explain basic device operating principles. A self-aligned fabrication process of lateral MBS devices with Schottky contacts and local oxidation of silicon technique (LOCOS) is described. Experimental results are compared with the analytical model to analyze the influence of device parasitics. Bidirectional switching and an on/off-current ratio of more than 100 is demonstrated for MBS devices for the first time.
Place, publisher, year, edition, pages
2005. 473-476 p.
, Proceedings of the European Solid-State Device Research Conference, ISSN 1930-8876
Electric currents, MOS devices, Schottky barrier diodes, Switching circuits
IdentifiersURN: urn:nbn:se:kth:diva-50567DOI: 10.1109/ESSDER.2005.1546687ISI: 000236176200110ISBN: 0-7803-9203-5OAI: oai:DiVA.org:kth-50567DiVA: diva2:495285
35th European Solid-State Device Research Conference SEP 12-16, 2005 Grenoble, FRANCE
QC 201203062012-02-082011-12-062012-03-06Bibliographically approved