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Monolithic Bidirectional Switch (MBS) - A novel MOS-based power device
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2005 (English)In: PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2005, 473-476 p.Conference paper, Published paper (Refereed)
Abstract [en]

A novel MOS-based power device, the Monolithic Bidirectional Switch (MBS), is investigated in this work. An analytical model is used to explain basic device operating principles. A self-aligned fabrication process of lateral MBS devices with Schottky contacts and local oxidation of silicon technique (LOCOS) is described. Experimental results are compared with the analytical model to analyze the influence of device parasitics. Bidirectional switching and an on/off-current ratio of more than 100 is demonstrated for MBS devices for the first time.

Place, publisher, year, edition, pages
2005. 473-476 p.
Series
Proceedings of the European Solid-State Device Research Conference, ISSN 1930-8876
Keyword [en]
Electric currents, MOS devices, Schottky barrier diodes, Switching circuits
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-50567DOI: 10.1109/ESSDER.2005.1546687ISI: 000236176200110ISBN: 0-7803-9203-5 (print)OAI: oai:DiVA.org:kth-50567DiVA: diva2:495285
Conference
35th European Solid-State Device Research Conference SEP 12-16, 2005 Grenoble, FRANCE
Note
QC 20120306Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-03-06Bibliographically approved

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