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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
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2007 (English)In: ESSDERC 2007: PROCEEDINGS OF THE 37TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2007, 283-286 p.Conference paper, Published paper (Refereed)
Abstract [en]

Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd(2)O(3) prepared by MBE and ALD, and for HfO(2) prepared by reactive sputtering, by measuring the frequency dependence of MOS capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.

Place, publisher, year, edition, pages
2007. 283-286 p.
Series
Proceedings of the European Solid-State Device Research Conference, ISSN 1930-8876
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-50563DOI: 10.1109/ESSDERC.2007.4430933ISI: 000252831900061ISBN: 978-1-4244-1123-8 (print)OAI: oai:DiVA.org:kth-50563DiVA: diva2:495290
Conference
37th European Solid-State Device Research Conference SEP 11-13, 2007 Munich, GERMANY
Note
QC 20120221Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-02-21Bibliographically approved

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Lemme, Max C.
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