Subthreshold characteristics of p-type triple-gate MOSFETs
2003 (English)In: ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, NEW YORK: IEEE , 2003, 123-126 p.Conference paper (Refereed)
The fabrication and characterization of triple-gate p-type metal-oxide semiconductor field effect transistors (p-MOSFETs) on SOI material with multiple channels is described. To demonstrate the beneficial effects of the triple-gate structure on scaling, output and transfer characteristics of 70nm printed gate length p-MOSFETs with 22nm MESA width are presented. The geometrical influence of triple-gate MESA width on subthreshold behavior is investigated in short- and long channel devices. The temperature dependence of subthreshold characteristics is discussed.
Place, publisher, year, edition, pages
NEW YORK: IEEE , 2003. 123-126 p.
IdentifiersURN: urn:nbn:se:kth:diva-50560DOI: 10.1109/ESSDERC.2003.1256826ISI: 000189004800028OAI: oai:DiVA.org:kth-50560DiVA: diva2:495304
33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE
NR 201408052012-02-082011-12-062012-02-08Bibliographically approved