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Subthreshold characteristics of p-type triple-gate MOSFETs
AMO GmbH, AMICA, Aachen, Germany.
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2003 (English)In: ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, NEW YORK: IEEE , 2003, 123-126 p.Conference paper, Published paper (Refereed)
Abstract [en]

The fabrication and characterization of triple-gate p-type metal-oxide semiconductor field effect transistors (p-MOSFETs) on SOI material with multiple channels is described. To demonstrate the beneficial effects of the triple-gate structure on scaling, output and transfer characteristics of 70nm printed gate length p-MOSFETs with 22nm MESA width are presented. The geometrical influence of triple-gate MESA width on subthreshold behavior is investigated in short- and long channel devices. The temperature dependence of subthreshold characteristics is discussed.

Place, publisher, year, edition, pages
NEW YORK: IEEE , 2003. 123-126 p.
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-50560DOI: 10.1109/ESSDERC.2003.1256826ISI: 000189004800028OAI: oai:DiVA.org:kth-50560DiVA: diva2:495304
Conference
33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE
Note
NR 20140805Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-02-08Bibliographically approved

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