PECVD grown Ge nanocrystals embedded in SiO(2): From disordered to templated self-organization
2009 (English)In: MICROELECTRONICS JOURNAL, ISSN 0026-2692, Vol. 40, no 4-5, 759-761 p.Article in journal (Refereed) Published
We present a new "templated self-organization" method for the preparation of Ge nanocrystals in SiO(2) that combines a bottom-up with a top-down approach for nanostructuring. Ge nanocrystals are formed by self-organization induced by thermal annealing of thin Ge films embedded ill SiO(2) whose areas are predefined by nanoimprint patterning. Thus Much smaller Structure sizes call be achieved than by pure nanostructuring and touch more regular structures call be prepared than by pure self-organization. in particular, the method enables the generation of Ge nanocrystals of equal size at predefined vertical and lateral positions thus facilitating the fabrication of nanoscaled devices due to the Suppression of Structural fluctuations.
Place, publisher, year, edition, pages
2009. Vol. 40, no 4-5, 759-761 p.
Self-organization, Template, Order, Ge nanocrystals, Nanoimprint
IdentifiersURN: urn:nbn:se:kth:diva-50558DOI: 10.1016/j.mejo.2008.11.008ISI: 000265870200026OAI: oai:DiVA.org:kth-50558DiVA: diva2:495313
QC 201203022012-02-082011-12-062012-03-02Bibliographically approved