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Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors
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2009 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 27, no 1, 352-355 p.Article in journal (Refereed) Published
Abstract [en]

With the employment of ultrathin, high dielectric constant gate materials in advanced semiconductor technology, the conventional capacitance-voltage measurement technique exhibits a series of anomalies. In particular, a nonsaturating increase in the accumulation capacitance with reducing measurement frequency is frequently observed, which has not been adequately explained to our knowledge. In this article, the authors provide an explanation for this anomaly and hence set a criterion for the lower bound on measurement frequency. We then present a model which allows the easy extraction of the required parameters and apply it to an experimental set of data.

Place, publisher, year, edition, pages
2009. Vol. 27, no 1, 352-355 p.
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Nano Technology
URN: urn:nbn:se:kth:diva-50557DOI: 10.1116/1.3025910ISI: 000265839000069OAI: diva2:495315
QC 20120227Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-02-27Bibliographically approved

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Lemme, Max C.
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