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Extracting the relative dielectric constant for "high-k layers" from CV measurements: Errors and error propagation
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2007 (English)In: Microelectronics and reliability, ISSN 0026-2714, E-ISSN 1872-941X, Vol. 47, no 4-5, 678-681 p.Article in journal (Refereed) Published
Abstract [en]

The paper pursues an investigation of the errors associated with the extraction of the dielectric constant (i.e., kappa value) from capacitance-voltage measurements on metal oxide semiconductor capacitors. The existence of a transition layer between the high-rc dielectric and the silicon substrate is a factor that affects - in general - the assessment of the electrical data, as well as the extraction of rc. A methodology which accounts for this transition layer and the errors related to other parameters involved in the k value extraction is presented; moreover, we apply this methodology to experimental CV results on HfO2/SiOx/Si structures produced in different conditions.

Place, publisher, year, edition, pages
2007. Vol. 47, no 4-5, 678-681 p.
National Category
Nano Technology
URN: urn:nbn:se:kth:diva-50556DOI: 10.1016/j.microrel.2007.01.006ISI: 000248663300045OAI: diva2:495316
QC 20120306Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-03-06Bibliographically approved

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Lemme, Max C.
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