Extracting the relative dielectric constant for "high-k layers" from CV measurements: Errors and error propagation
2007 (English)In: Microelectronics and reliability, ISSN 0026-2714, E-ISSN 1872-941X, Vol. 47, no 4-5, 678-681 p.Article in journal (Refereed) Published
The paper pursues an investigation of the errors associated with the extraction of the dielectric constant (i.e., kappa value) from capacitance-voltage measurements on metal oxide semiconductor capacitors. The existence of a transition layer between the high-rc dielectric and the silicon substrate is a factor that affects - in general - the assessment of the electrical data, as well as the extraction of rc. A methodology which accounts for this transition layer and the errors related to other parameters involved in the k value extraction is presented; moreover, we apply this methodology to experimental CV results on HfO2/SiOx/Si structures produced in different conditions.
Place, publisher, year, edition, pages
2007. Vol. 47, no 4-5, 678-681 p.
IdentifiersURN: urn:nbn:se:kth:diva-50556DOI: 10.1016/j.microrel.2007.01.006ISI: 000248663300045OAI: oai:DiVA.org:kth-50556DiVA: diva2:495316
QC 201203062012-02-082011-12-062012-03-06Bibliographically approved