Change search
ReferencesLink to record
Permanent link

Direct link
Impact of supercritical CO(2) drying on roughness of hydrogen silsesquioxane e-beam resist
Show others and affiliations
2006 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 24, no 2, 570-574 p.Article in journal (Refereed) Published
Abstract [en]

Surface roughness (SR) and, especially, the closely related line-edge roughness (LER) of nanostructures are important issues in advanced lithography. In this study, the origin of surface roughness in the negative tone electron resist hydrogen silsesquioxane is shown to be associated with polymer aggregate extraction not only during resist development but also during resist drying. In addition, the impact of exposure dose and resist development time on SR is clarified. Possibilities to reduce SR and LER of nanostructures by optimizing resist rinsing and drying are evaluated. A process of supercritical CO(2) resist drying that delivers remarkable reduction of roughness is presented. (c) 2006 American Vacuum Society.

Place, publisher, year, edition, pages
2006. Vol. 24, no 2, 570-574 p.
National Category
Nano Technology
URN: urn:nbn:se:kth:diva-50554DOI: 10.1116/1.2167990ISI: 000237172000011OAI: diva2:495321
QC 20120302Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-03-02Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Lemme, Max C.
In the same journal
Journal of Vacuum Science & Technology B
Nano Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 20 hits
ReferencesLink to record
Permanent link

Direct link