Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics
2006 (English)In: ESSDERC 2006: Proceedings of the 36th European Solid-State Device Research Conference, 2006, 150-153 p.Conference paper (Refereed)
Two process concepts for integration of novel gate stacks with epitaxial high-K dielectrics and metal gate electrodes are presented. A "gate first" process based on a planar gate stack on ultra thin SOI material has been used for successful fabrication of MOSFETs with TiN/Gd2O3 gate stack. Furthermore MOSFETs with W/Gd2O3 gate stack have been fabricated with a replacement gate process. This is the first successful attempt to integrate crystalline high-K dielectrics into a "gentle" damascene metal gate process in order to reduce process induced oxide damages.
Place, publisher, year, edition, pages
2006. 150-153 p.
, Proceedings of the European Solid-State Device Research Conference, ISSN 1930-8876
IdentifiersURN: urn:nbn:se:kth:diva-50553DOI: 10.1109/ESSDER.2006.307660ISI: 000245038000033ISBN: 978-1-4244-0301-1OAI: oai:DiVA.org:kth-50553DiVA: diva2:495324
36th European Solid-State Device Research Conference SEP 19-21, 2006 Montreux, SWITZERLAND
QC 201202292012-02-082011-12-062012-02-29Bibliographically approved