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Comparison of metal gate electrodes on MOCVD HfO2
AMO GmbH, AMICA, Aachen, Germany.
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2005 (English)In: Microelectronics and reliability, ISSN 0026-2714, E-ISSN 1872-941X, Vol. 45, no 5-6, 953-956 p.Article in journal (Refereed) Published
Abstract [en]

Metal gate electrodes of sputtered aluminum (At), titanium nitride (TiN) and nickel aluminum nitride (NiAlN) are investigated in this work. They are compared with respect to their compatibility with metal organic chemical vapor deposited (MOCVD) hafnium dioxide (HfO2) gate dielectrics. TiN, with a midgap work function of 4.65 eV on SiO2, exhibits promising characteristics as metal gate on HfO2. In addition, encouraging results are presented for the ternary metal NiAlN, whereas classic At electrodes are found unstable in conjunction with HfO2.

Place, publisher, year, edition, pages
2005. Vol. 45, no 5-6, 953-956 p.
National Category
Nano Technology
URN: urn:nbn:se:kth:diva-50551DOI: 10.1016/j.microrel.2004.11.018ISI: 000227914200045OAI: diva2:495326
QC 20120222Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-02-22Bibliographically approved

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Lemme, Max C.
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