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Charge trapping in ultrathin Gd2O3 high-k dielectric
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2007 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 84, no 9-10, 1968-1971 p.Article in journal (Refereed) Published
Abstract [en]

Charge trapping in ultrathin high-k Gd2O3 dielectric leading to appearance of hysteresis in C-V curves is studied by capacitance-voltage and current-voltage techniques. It was shown that the large leakage current at a negative gate voltage causes the generation of the positive charge in the dielectric layer, resulting in the respective shift of the C-V curve. The capture cross-section of the hole traps is around 2 x 10(-20) cm(2). The distribution of the interface states was measured by conductance technique showing the concentration up to 7.5 x 10(12) eV(-1) cm(-2) near the valence band edge.

Place, publisher, year, edition, pages
2007. Vol. 84, no 9-10, 1968-1971 p.
Keyword [en]
high-k dielectric, rare earth oxide, charge trapping, Gd2O3
National Category
Nano Technology
URN: urn:nbn:se:kth:diva-50550DOI: 10.1016/j.mee.2007.04.136ISI: 000247378600030OAI: diva2:495328
QC 20120217Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-02-17Bibliographically approved

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Lemme, Max C.
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