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Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility
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2007 (English)In: ESSDERC 2007: PROCEEDINGS OF THE 37TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2007, 315-318 p.Conference paper, Published paper (Refereed)
Abstract [en]

Strained Silicon on insulators (sSOI) wafers with a supercritical thickness of 58 nm were produced using thin strain relaxed SiGe buffer layers, wafer bonding, selective etch back and epitaxial overgrowth. Raman spectroscopy revealed an homogeneous strain of 0.63 +/- 0.03% in the strained Si layer. Long channel n-type SOI-MOSFETs showed very large electron mobilities up to 1200 cm(2)/Vs in the strained Si devices. These values are more than two times larger than those of reference SOI n-MOSFETs. Mobility simulations with state of the art scattering models are then used to interpret the experiments.

Place, publisher, year, edition, pages
2007. 315-318 p.
Series
Proceedings of the European Solid-State Device Research Conference, ISSN 1930-8876
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-50549DOI: 10.1109/ESSDERC.2007.4430941ISI: 000252831900069ISBN: 978-1-4244-1123-8 (print)OAI: oai:DiVA.org:kth-50549DiVA: diva2:495330
Conference
37th European Solid-State Device Research Conference SEP 11-13, 2007 Munich, GERMANY
Note
QC 20120309Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-03-09Bibliographically approved

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