Change search
ReferencesLink to record
Permanent link

Direct link
Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility
Show others and affiliations
2007 (English)In: ESSDERC 2007: PROCEEDINGS OF THE 37TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2007, 315-318 p.Conference paper (Refereed)
Abstract [en]

Strained Silicon on insulators (sSOI) wafers with a supercritical thickness of 58 nm were produced using thin strain relaxed SiGe buffer layers, wafer bonding, selective etch back and epitaxial overgrowth. Raman spectroscopy revealed an homogeneous strain of 0.63 +/- 0.03% in the strained Si layer. Long channel n-type SOI-MOSFETs showed very large electron mobilities up to 1200 cm(2)/Vs in the strained Si devices. These values are more than two times larger than those of reference SOI n-MOSFETs. Mobility simulations with state of the art scattering models are then used to interpret the experiments.

Place, publisher, year, edition, pages
2007. 315-318 p.
, Proceedings of the European Solid-State Device Research Conference, ISSN 1930-8876
National Category
Nano Technology
URN: urn:nbn:se:kth:diva-50549DOI: 10.1109/ESSDERC.2007.4430941ISI: 000252831900069ISBN: 978-1-4244-1123-8OAI: diva2:495330
37th European Solid-State Device Research Conference SEP 11-13, 2007 Munich, GERMANY
QC 20120309Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-03-09Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Lemme, Max C.
Nano Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 19 hits
ReferencesLink to record
Permanent link

Direct link