Fabrication of monolithic bidirectional switch devices
2004 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 73-4, 463-467 p.Article in journal (Refereed) Published
The fabrication scheme of a novel MOS-based power device, a monolithic bidirectional switch (MBS), is presented. This concept allows the integration of a bidirectional switch with the advantages of low power consumption, small package size, and low fabrication costs. Furthermore, device simulations predict a performance benefit for power applications such as matrix converters. In an MBS, the field effect is used to control carrier concentrations in elevated structures made up of nearly intrinsic silicon. A CMOS-compatible nano-fabrication process for the MBS is proposed, employing local oxidation of silicon for self-aligned contact formation. First electrical results are presented. (C) 2004 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2004. Vol. 73-4, 463-467 p.
bidirectional switch, silicon, power device, LOCOS, side gate
IdentifiersURN: urn:nbn:se:kth:diva-50547DOI: 10.1016/j.mee.2004.03.018ISI: 000222145400082OAI: oai:DiVA.org:kth-50547DiVA: diva2:495334
QC 201203062012-02-082011-12-062012-03-06Bibliographically approved