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Fabrication of monolithic bidirectional switch devices
AMO GmbH, AMICA, Aachen, Germany.
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2004 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 73-4, 463-467 p.Article in journal (Refereed) Published
Abstract [en]

The fabrication scheme of a novel MOS-based power device, a monolithic bidirectional switch (MBS), is presented. This concept allows the integration of a bidirectional switch with the advantages of low power consumption, small package size, and low fabrication costs. Furthermore, device simulations predict a performance benefit for power applications such as matrix converters. In an MBS, the field effect is used to control carrier concentrations in elevated structures made up of nearly intrinsic silicon. A CMOS-compatible nano-fabrication process for the MBS is proposed, employing local oxidation of silicon for self-aligned contact formation. First electrical results are presented. (C) 2004 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2004. Vol. 73-4, 463-467 p.
Keyword [en]
bidirectional switch, silicon, power device, LOCOS, side gate
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-50547DOI: 10.1016/j.mee.2004.03.018ISI: 000222145400082OAI: oai:DiVA.org:kth-50547DiVA: diva2:495334
Note
QC 20120306Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2017-12-07Bibliographically approved

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