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Triple-gate metal-oxide-semiconductor field effect transistors fabricated with interference lithography
AMO GmbH, AMICA, Aachen, Germany.
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2004 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 15, no 4, S208-S210 p.Article in journal (Refereed) Published
Abstract [en]

In this work, n-type triple-crate metal-oxide-semiconductor field effect transistors (MOSFETs) are presented, where laser interference lithography (LIL) is integrated into a silicon-on-insulator (SOI) CMOS process to provide for the critical definition of the transistor channels. A mix and match process of optical contact lithography and LIL is developed to achieve device relevant structures. The triple-gate MOSFETs are electrically characterized to demonstrate the feasibility of this low cost fabrication process.

Place, publisher, year, edition, pages
2004. Vol. 15, no 4, S208-S210 p.
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Nano Technology
URN: urn:nbn:se:kth:diva-50546DOI: 10.1088/0957-4484/15/4/016ISI: 000221143400017OAI: diva2:495340
QC 20120221Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-02-21Bibliographically approved

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Lemme, Max C.
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