Triple-gate metal-oxide-semiconductor field effect transistors fabricated with interference lithography
2004 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 15, no 4, S208-S210 p.Article in journal (Refereed) Published
In this work, n-type triple-crate metal-oxide-semiconductor field effect transistors (MOSFETs) are presented, where laser interference lithography (LIL) is integrated into a silicon-on-insulator (SOI) CMOS process to provide for the critical definition of the transistor channels. A mix and match process of optical contact lithography and LIL is developed to achieve device relevant structures. The triple-gate MOSFETs are electrically characterized to demonstrate the feasibility of this low cost fabrication process.
Place, publisher, year, edition, pages
2004. Vol. 15, no 4, S208-S210 p.
IdentifiersURN: urn:nbn:se:kth:diva-50546DOI: 10.1088/0957-4484/15/4/016ISI: 000221143400017OAI: oai:DiVA.org:kth-50546DiVA: diva2:495340
QC 201202212012-02-082011-12-062012-02-21Bibliographically approved