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Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics
AMO GmbH, AMICA, Aachen, Germany.
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2009 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 86, no 7-9, 1642-1645 p.Article in journal (Refereed) Published
Abstract [en]

We investigate the potential of gadolinium silicate (GdSiO) as a thermally stable high-k gate dielectric in a gate first integration scheme. There silicon diffuses into gadolinium oxide (Gd(2)O(3)) from a silicon oxide (SiO(2)) interlayer specifically prepared for this purpose. We report on the scaling potential based on detailed material analysis. Gate leakage current densities and EOT values are compatible with an ITRS requirement for low stand by power (LSTP). The applicability of this GdSiO process is demonstrated by fully functional silicon on insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs).

Place, publisher, year, edition, pages
2009. Vol. 86, no 7-9, 1642-1645 p.
Keyword [en]
High-k dielectric, Rare earth silicate, Gate first integration, Silicate formation
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-50544DOI: 10.1016/j.mee.2009.03.084ISI: 000267460100030OAI: oai:DiVA.org:kth-50544DiVA: diva2:495342
Note
QC 20120209Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2017-12-07Bibliographically approved

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