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Leakage current mechanisms in epitaxial Gd(2)O(3) high-k gate dielectrics
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2008 (English)In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 11, no 3, p. G12-G14Article in journal (Refereed) Published
Abstract [en]

We report on leakage current mechanisms in epitaxial gadolinium oxide (Gd(2)O(3)) high-k gate dielectrics suitable for low standby power logic applications. The investigated p-type metal-oxide-semi con doctor capacitors are gated with complementary-metal-oxide-semiconductor-compatible fully silicided nickel silicide electrodes. The Gd(2)O(3) thickness is 5.9 nm corresponding to a capacitance equivalent oxide thickness of 1.8 nm. Poole-Frenkel conduction is identified as the main leakage mechanism with the high-frequency permittivity describing the dielectric response on the carriers. A trap level of Phi(T) = 1.2 eV is extracted. The resulting band diagram strongly suggests hole conduction to be dominant over electron conduction.

Place, publisher, year, edition, pages
2008. Vol. 11, no 3, p. G12-G14
Keywords [en]
Electrochemical electrodes; Epitaxial layers; Gadolinium compounds; Leakage currents; MOS devices; Silicides
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-50542DOI: 10.1149/1.2828201ISI: 000253121800013OAI: oai:DiVA.org:kth-50542DiVA, id: diva2:495344
Note
QC 20120209Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2017-12-07Bibliographically approved

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Lemme, Max C.
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