Supercritical drying for high aspect-ratio HSQ nano-structures
2007 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 84, no 5-8, 1045-1048 p.Article in journal (Refereed) Published
The benefits of supercritical resist drying (SRD) technique using carbon dioxide (CO2) are investigated with respect to the resolution of dense patterns and the aspect ratio (AR) of nano-structures in rather thick HSQ layers. For double lines separated by a distance of 50 nm the maximum achievable AR is trebled using SRD processes compared to conventional nitrogen blow. The mechanical stability of resist structures is significantly improved by using SRI).
Place, publisher, year, edition, pages
2007. Vol. 84, no 5-8, 1045-1048 p.
supercritical resist drying, SRD, HSQ, electron beam lithography, aspect ratio
IdentifiersURN: urn:nbn:se:kth:diva-50541DOI: 10.1016/j.mee.2007.01.142ISI: 000247182500083OAI: oai:DiVA.org:kth-50541DiVA: diva2:495352
QC 20120203012012-02-082011-12-062012-03-01Bibliographically approved