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Introduction of crystalline high-k gate dielectrics in a CMOS process
AMO GmbH, AMICA, Aachen, Germany.
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2005 (English)In: Journal of Non-Crystalline Solids, ISSN 0022-3093, E-ISSN 1873-4812, Vol. 351, no 21-23, 1885-1889 p.Article in journal (Refereed) Published
Abstract [en]

In this work we report on methods to introduce crystalline rare-earth (RE) oxides with high (k > 3.9) dielectric constants (high-k) in a CMOS process flow. Key process steps compatible with crystalline praseodymium oxide (Pr2O3) high-k gate dielectric have been developed and evaluated in metal-oxide-semiconductor (MOS) structures and n-MOS transistors fabricated in an adapted conventional bulk process. From capacitance-voltage measurements a dielectric constant of k = 36 has been calculated. Furthermore an alternative process sequence suitable for the introduction of high-k material into silicon on insulator (SOI) MOS-field-effect-transistors (MOSFET) is presented. The feasibility of this process is shown by realization of n- and p-MOSFETs with standard SiO2 gate dielectric as demonstrator. SiO2 gate dielectric can be replaced by crystalline RE-oxides in the next batch fabrication.

Place, publisher, year, edition, pages
2005. Vol. 351, no 21-23, 1885-1889 p.
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-50539DOI: 10.1016/j.jnoncrysol.2005.04.032ISI: 000230574700032OAI: oai:DiVA.org:kth-50539DiVA: diva2:495353
Note
QC 20120229Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2017-12-07Bibliographically approved

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