Supercritical drying process for high aspect-ratio HSQ nano-structures
2006 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 83, no 4-9, 1124-1127 p.Article in journal (Refereed) Published
Supercritical resist drying allows the fabrication of high aspect-ratio (AR) resist patterns. The potential of this drying technique to increase the maximum achievable AR and the resolution of the overall lithographic process is analyzed for hydrogen silsesquioxane (HSQ). The maximum achievable AR is doubled compared to conventional nitrogen blow drying. Furthermore, the resolution is improved significantly.
Place, publisher, year, edition, pages
2006. Vol. 83, no 4-9, 1124-1127 p.
supercritical resist drying, HSQ, high-resolution electron beam lithography, aspect ratio
IdentifiersURN: urn:nbn:se:kth:diva-50540DOI: 10.1016/j.mee.2006.01.026ISI: 000237581900118OAI: oai:DiVA.org:kth-50540DiVA: diva2:495363
QC 201203012012-02-082011-12-062012-03-01Bibliographically approved