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Supercritical drying process for high aspect-ratio HSQ nano-structures
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2006 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 83, no 4-9, 1124-1127 p.Article in journal (Refereed) Published
Abstract [en]

Supercritical resist drying allows the fabrication of high aspect-ratio (AR) resist patterns. The potential of this drying technique to increase the maximum achievable AR and the resolution of the overall lithographic process is analyzed for hydrogen silsesquioxane (HSQ). The maximum achievable AR is doubled compared to conventional nitrogen blow drying. Furthermore, the resolution is improved significantly.

Place, publisher, year, edition, pages
2006. Vol. 83, no 4-9, 1124-1127 p.
Keyword [en]
supercritical resist drying, HSQ, high-resolution electron beam lithography, aspect ratio
National Category
Nano Technology
URN: urn:nbn:se:kth:diva-50540DOI: 10.1016/j.mee.2006.01.026ISI: 000237581900118OAI: diva2:495363
QC 20120301Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-03-01Bibliographically approved

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Lemme, Max C.
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