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Complementary metal oxide semiconductor integration of epitaxial Gd(2)O(3)
AMO GmbH, AMICA, Aachen, Germany.
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2009 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 27, no 1, 258-261 p.Article in journal (Refereed) Published
Abstract [en]

In this paper, epitaxial gadolinium oxide (Gd(2)O(3)) is reviewed as a potential high-K gate dielectric, both "as deposited" by molecular beam epitaxy as well as after integration into complementary metal oxide semiconductor (CMOS) processes. The material shows promising intrinsic properties, meeting critical ITRS targets for leakage current densities even at subnanometer equivalent oxide thicknesses. These epitaxial oxides can be integrated into a CMOS platform by a "gentle" replacement gate process. While high temperature processing potentially degrades the material, a route toward thermally stable epitaxial Gd(2)O(3) gate dielectrics is explored by carefully controlling the annealing conditions.

Place, publisher, year, edition, pages
2009. Vol. 27, no 1, 258-261 p.
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-50536DOI: 10.1116/1.3054350ISI: 000265839000050OAI: oai:DiVA.org:kth-50536DiVA: diva2:495368
Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2017-12-07Bibliographically approved

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Lemme, Max C.
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