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Investigation of MOS capacitors and SOI-MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes
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2007 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 51, no 4, 617-621 p.Article in journal (Refereed) Published
Abstract [en]

Electrical properties of metal oxide semiconductor (MOS) capacitors with gate stacks of epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) are studied. The influence of CMOS compatible rapid thermal annealing on these gate stacks is examined. Finally, n- and p-type MOS-field effect transistors (MOSFETs) on silicon on insulator (SOI) material with epitaxial Gd2O3 and TiN gate electrodes are presented.

Place, publisher, year, edition, pages
2007. Vol. 51, no 4, 617-621 p.
Keyword [en]
high-k, rare earth oxide, CMOS, metal gate
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-50534DOI: 10.1016/j.sse.2007.02.008ISI: 000246602800016OAI: oai:DiVA.org:kth-50534DiVA: diva2:495371
Note
QC 20120217Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2017-12-07Bibliographically approved

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