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Gentle FUSI NiSi metal gate process for high-k dielectric screening
AMO GmbH, AMICA, Aachen, Germany.
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2008 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 85, no 10, 2019-2021 p.Article in journal (Refereed) Published
Abstract [en]

In this paper, a process flow well suited for screening of novel high-k dielectrics is presented. In vacuo silicon capping of the dielectrics excludes process and handling induced influences especially if hygroscopic materials are investigated. A gentle, low thermal budget process is demonstrated to form metal gate electrodes by turning the silicon capping into a fully silicided nickel silicide. This process enables the investigation of rare earth oxide based high-k dielectrics and specifically their intrinsic material properties using metal oxide semiconductor (MOS) capacitors. We demonstrate the formation of nickel monosilicide electrodes which show smooth interfaces to the lanthanum- and gadolinium-based high-k oxide films. The dielectrics have equivalent oxide thicknesses of EOT = 0.95 nm (lanthanum silicate) and EOT = 0.6 nm (epitaxial gadolinium oxide).

Place, publisher, year, edition, pages
2008. Vol. 85, no 10, 2019-2021 p.
Keyword [en]
FUSI NiSi, High-k, Ultrathin dielectric, Material screening
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-50535DOI: 10.1016/j.mee.2008.03.016ISI: 000260343600020OAI: oai:DiVA.org:kth-50535DiVA: diva2:495372
Note
QC 20120209Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2017-12-07Bibliographically approved

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