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Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-k dielectrics
AMO GmbH, AMICA, Aachen, Germany.
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2007 (English)In: Microelectronics and reliability, ISSN 0026-2714, E-ISSN 1872-941X, Vol. 47, no 4-5, 536-539 p.Article in journal (Refereed) Published
Abstract [en]

In this work we compare the impacts of nickel (Ni), titanium-nitride (TiN), molybdenum (Mo), and aluminium (Al), gates on MOS capacitors incorporating HfO2- or ZrO2-dielectrics. The primary focus lies on interface trapping, oxide charging, and thermodynamical stability during different annealing steps of these gate stacks. Whereas Ni, Mo, and especially TIN are investigated as most promising candidates for future CMOS devices, Al acted as reference gate material to benchmark the parameters. Post-metallization annealing of both, TiN- and Mo-stacks, resulted in very promising electrical characteristics. However, gate stacks annealed at temperatures of 800 degrees C or 950 degrees C show thermodynamic instability and related undesirable high leakage currents.

Place, publisher, year, edition, pages
2007. Vol. 47, no 4-5, 536-539 p.
Keyword [en]
National Category
Nano Technology
URN: urn:nbn:se:kth:diva-50533DOI: 10.1016/j.microrel.2007.01.002ISI: 000248663300014OAI: diva2:495374
QC 20120228Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-02-28Bibliographically approved

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Lemme, Max C.
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