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Nanowire fin field effect transistors via UV-based nanoimprint lithography
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2006 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 24, no 6, 2964-2967 p.Article in journal (Refereed) Published
Abstract [en]

A triple step alignment process for UV nanoimprint lithography (UV-NIL) for the fabrication of nanoscale fin field effect transistors (FinFETs) is presented. An alignment accuracy is demonstrated between two functional layers of less than 20 nm (3 sigma). The electrical characterization of the FinFETs fabricated by a full NIL process demonstrates the potential of UV-NIL for future nanoelectronic devices.

Place, publisher, year, edition, pages
2006. Vol. 24, no 6, 2964-2967 p.
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Nano Technology
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URN: urn:nbn:se:kth:diva-50532DOI: 10.1116/1.2395956ISI: 000243324400087OAI: oai:DiVA.org:kth-50532DiVA: diva2:495375
Note
QC 20120222Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2017-12-07Bibliographically approved

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Lemme, Max C.
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