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Hot-phonon temperature and lifetime in biased boron-implanted SiO2/Si/SiO2 channels
AMO GmbH, AMICA, Aachen, Germany.
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2006 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 21, no 6, 803-807 p.Article in journal (Refereed) Published
Abstract [en]

Microwave noise temperature is measured as a function of supplied electric power in 100 nm thick silicon on insulator layers. At 293 K, the estimated hot-hole energy-relaxation time decreases from similar to 9 ps at power below 0.05 nW/hole down to similar to 1.55 ps in the power range (2-10) nW/hole. The results are interpreted in terms of hot-hole interaction with longitudinal optical (LO) phonons. A comparison of the experimental data with those calculated in the hot-hole-temperature approximation indicates accumulation of non-equilibrium optical phonons (termed hot phonons). In the power range of the dominant hole-LO phonon interaction, the increase in equivalent hot-phonon temperature is proportional to the increase in hot-hole temperature. The estimated value for the hot-phonon lifetime, (1.75 +/- 0.4) ps, is comparable with the hot-hole energy-relaxation time at the high bias, similar to 1.55 ps.

Place, publisher, year, edition, pages
2006. Vol. 21, no 6, 803-807 p.
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Nano Technology
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URN: urn:nbn:se:kth:diva-50531DOI: 10.1088/0268-1242/21/6/017ISI: 000238433900019OAI: oai:DiVA.org:kth-50531DiVA: diva2:495376
Note
QC 20120220Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2017-12-07Bibliographically approved

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