Stability of crystalline Gd(2)O(3) thin films on silicon during rapid thermal annealing
2008 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 23, no 3, 035010- p.Article in journal (Refereed) Published
We investigate the impact of rapid thermal anneals on structural and electrical properties of crystalline Gd(2)O(3) layers grown on Si with different orientations. Due to additional oxygen from the annealing ambient, a structureless two-layer stack ( silicon-oxide-like and silicate-like) between the silicon and the crystalline oxide will be formed. The degradation of layers can be significantly reduced by sealing the layer with a-Si prior to annealing. For the capped layers, the effective capacitance equivalent thickness increases only slightly even after a 1000 degrees C anneal.
Place, publisher, year, edition, pages
2008. Vol. 23, no 3, 035010- p.
ELECTRODES, MOSFETS, OXIDES
IdentifiersURN: urn:nbn:se:kth:diva-50528DOI: 10.1088/0268-1242/23/3/035010ISI: 000254385900010OAI: oai:DiVA.org:kth-50528DiVA: diva2:495379
QC 201202092012-02-082011-12-062012-02-09Bibliographically approved