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Stability of crystalline Gd(2)O(3) thin films on silicon during rapid thermal annealing
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2008 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 23, no 3, 035010- p.Article in journal (Refereed) Published
Abstract [en]

We investigate the impact of rapid thermal anneals on structural and electrical properties of crystalline Gd(2)O(3) layers grown on Si with different orientations. Due to additional oxygen from the annealing ambient, a structureless two-layer stack ( silicon-oxide-like and silicate-like) between the silicon and the crystalline oxide will be formed. The degradation of layers can be significantly reduced by sealing the layer with a-Si prior to annealing. For the capped layers, the effective capacitance equivalent thickness increases only slightly even after a 1000 degrees C anneal.

Place, publisher, year, edition, pages
2008. Vol. 23, no 3, 035010- p.
Keyword [en]
ELECTRODES, MOSFETS, OXIDES
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-50528DOI: 10.1088/0268-1242/23/3/035010ISI: 000254385900010OAI: oai:DiVA.org:kth-50528DiVA: diva2:495379
Note
QC 20120209Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2017-12-07Bibliographically approved

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