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Graphene field-effect devices
AMO GmbH, AMICA, Aachen, Germany.
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2007 (English)In: The European Physical Journal Special Topics, ISSN 1951-6355, Vol. 148, no 1, 19-26 p.Article in journal (Refereed) Published
Abstract [en]

In this article, graphene is investigated with respect to its electronic properties when introduced into field effect devices ( FED). With the exception of manual graphene deposition, conventional top-down CMOS-compatible processes are applied. Few and monolayer graphene sheets are characterized by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The electrical properties of monolayer graphene sandwiched between two silicon dioxide films are studied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from double-gated Graphene-FEDs and silicon metal-oxide-semiconductor field-effect-transistors ( MOSFETs).

Place, publisher, year, edition, pages
2007. Vol. 148, no 1, 19-26 p.
Keyword [en]
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Nano Technology
URN: urn:nbn:se:kth:diva-50522DOI: 10.1140/epjst/e2007-00222-8ISI: 000249758000004OAI: diva2:495385
QC 20120217Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-02-17Bibliographically approved

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Lemme, Max C.
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