Graphene field-effect devices
2007 (English)In: The European Physical Journal Special Topics, ISSN 1951-6355, Vol. 148, no 1, 19-26 p.Article in journal (Refereed) Published
In this article, graphene is investigated with respect to its electronic properties when introduced into field effect devices ( FED). With the exception of manual graphene deposition, conventional top-down CMOS-compatible processes are applied. Few and monolayer graphene sheets are characterized by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The electrical properties of monolayer graphene sandwiched between two silicon dioxide films are studied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from double-gated Graphene-FEDs and silicon metal-oxide-semiconductor field-effect-transistors ( MOSFETs).
Place, publisher, year, edition, pages
2007. Vol. 148, no 1, 19-26 p.
HIGH-PERFORMANCE; SCATTERING; MOBILITY; MOSFETS; FILMS
IdentifiersURN: urn:nbn:se:kth:diva-50522DOI: 10.1140/epjst/e2007-00222-8ISI: 000249758000004OAI: oai:DiVA.org:kth-50522DiVA: diva2:495385
QC 201202172012-02-082011-12-062012-02-17Bibliographically approved