Impact of H-2/N-2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks
2005 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 80, 70-73 p.Article in journal (Refereed) Published
This paper reports on the influence of forming gas annealing (5%H-2/95%N-2) over the temperature range 350 degrees C-550 degrees C on the density of electrically active interface states in Si(100)/SiO2/HfO2/TiN gate stacks. Prior to forming gas annealing the distribution of interface states across the energy gap exhibits the electrical signature of the P-b0 dangling bond centre for the hydrogen free Si(100)/SiO2 interface. Forming gas annealing at 350 degrees C and 400 degrees C results in a reduction of the interface state density, with an increase in interface state density for forming gas anneals in the range 450 degrees C-550 degrees C. The effect of the cooling ambient for the forming gas anneal (N-2 or H-2/N-2) is also reported.
Place, publisher, year, edition, pages
2005. Vol. 80, 70-73 p.
high dielectric constant thin films, Si(100)/SiO2/HfO2/TiN gate stacks, interface states, forming gas annealing
IdentifiersURN: urn:nbn:se:kth:diva-50519DOI: 10.1016/j.mee.2005.04.023ISI: 000231517000018OAI: oai:DiVA.org:kth-50519DiVA: diva2:495387
QC 201202272012-02-082011-12-062012-02-27Bibliographically approved