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Impact of H-2/N-2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks
AMO GmbH, AMICA, Aachen, Germany.
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2005 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 80, 70-73 p.Article in journal (Refereed) Published
Abstract [en]

This paper reports on the influence of forming gas annealing (5%H-2/95%N-2) over the temperature range 350 degrees C-550 degrees C on the density of electrically active interface states in Si(100)/SiO2/HfO2/TiN gate stacks. Prior to forming gas annealing the distribution of interface states across the energy gap exhibits the electrical signature of the P-b0 dangling bond centre for the hydrogen free Si(100)/SiO2 interface. Forming gas annealing at 350 degrees C and 400 degrees C results in a reduction of the interface state density, with an increase in interface state density for forming gas anneals in the range 450 degrees C-550 degrees C. The effect of the cooling ambient for the forming gas anneal (N-2 or H-2/N-2) is also reported.

Place, publisher, year, edition, pages
2005. Vol. 80, 70-73 p.
Keyword [en]
high dielectric constant thin films, Si(100)/SiO2/HfO2/TiN gate stacks, interface states, forming gas annealing
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-50519DOI: 10.1016/j.mee.2005.04.023ISI: 000231517000018OAI: oai:DiVA.org:kth-50519DiVA: diva2:495387
Note
QC 20120227Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2017-12-07Bibliographically approved

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