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Highly selective etch process for silicon-on-insulator nano-devices
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2005 (English)In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 78-79, no SI, 212-217 p.Article in journal (Refereed) Published
Abstract [en]

Reactive ion etch (RIE) processes with HBr/O-2 chemistry are optimized for processing of functional nanostructures based on silicon and polysilicon. The etch rate, etch selectivity, anisotropy and sidewall roughness are investigated for specific applications. The potential of this process technology for nanoscale functional devices is demonstrated by MOSFETs with 12 nm gate length and optimized photonic devices with ultrahigh Q-factors.

Place, publisher, year, edition, pages
2005. Vol. 78-79, no SI, 212-217 p.
Keyword [en]
HBr, ICP-RIE, SOI, EJ-MOSFET, microring resonator, silicon photonics
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-50518DOI: 10.1016/j.mee.2004.12.029ISI: 000228589700036OAI: oai:DiVA.org:kth-50518DiVA: diva2:495389
Note
QC 20120301Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2017-12-07Bibliographically approved

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