Highly selective etch process for silicon-on-insulator nano-devices
2005 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 78-79, no SI, 212-217 p.Article in journal (Refereed) Published
Reactive ion etch (RIE) processes with HBr/O-2 chemistry are optimized for processing of functional nanostructures based on silicon and polysilicon. The etch rate, etch selectivity, anisotropy and sidewall roughness are investigated for specific applications. The potential of this process technology for nanoscale functional devices is demonstrated by MOSFETs with 12 nm gate length and optimized photonic devices with ultrahigh Q-factors.
Place, publisher, year, edition, pages
2005. Vol. 78-79, no SI, 212-217 p.
HBr, ICP-RIE, SOI, EJ-MOSFET, microring resonator, silicon photonics
IdentifiersURN: urn:nbn:se:kth:diva-50518DOI: 10.1016/j.mee.2004.12.029ISI: 000228589700036OAI: oai:DiVA.org:kth-50518DiVA: diva2:495389
QC 201203012012-02-082011-12-062012-03-01Bibliographically approved