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CMOS integration of epitaxial Gd(2)O(3) high-k gate dielectrics
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2006 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 50, no 6, 979-985 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial gadolinium oxide (Gd(2)O(3)) high-k dielectrics are investigated with respect to their CMOS compatibility in metal oxide semiconductor (MOS) capacitors and field effect transistors (MOSFETs). MOS capacitors with various gate electrodes are exposed to typical CMOS process steps and evaluated with capacitance voltage (CV) and current voltage (JV) measurements. The effects of high temperature processes on thermal stabilities of channel/dielectric and dielectric/gate electrode interfaces is studied in detail. A feasible CMOS process with epitaxial gate oxides and metal gate electrodes is identified and demonstrated by a fully functional n-MOSFET for the first time.

Place, publisher, year, edition, pages
2006. Vol. 50, no 6, 979-985 p.
Keyword [en]
high-k gate dielectric, metal gate electrode, epitaxial gate dielectric, gadolinium oxide (Gd(2)O(3)), CMOS integration, silicon on insulator(SOI)
National Category
Nano Technology
URN: urn:nbn:se:kth:diva-50516DOI: 10.1016/j.sse.2006.04.018ISI: 000239499400014OAI: diva2:495390
QC 20120229Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-02-29Bibliographically approved

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Lemme, Max C.
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