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Navigation aids in the search for future high-k dielectrics: Physical and electrical trends
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2007 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 51, no 4, 622-626 p.Article in journal (Refereed) Published
Abstract [en]

From experimental literature data on metal oxides combined with theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm. (c) 2007 Elsevier Ltd. All rights reserved.

Place, publisher, year, edition, pages
2007. Vol. 51, no 4, 622-626 p.
Keyword [en]
high-k dielectrics, dielectric constant, CMOS, rare earth oxides
National Category
Nano Technology
URN: urn:nbn:se:kth:diva-50511DOI: 10.1016/j.sse.2007.02.021ISI: 000246602800017OAI: diva2:495395
QC 20120305Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-03-05Bibliographically approved

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Lemme, Max C.
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