A graphene field-effect device
2007 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 28, no 4, 282-284 p.Article in journal (Refereed) Published
In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs.
Place, publisher, year, edition, pages
2007. Vol. 28, no 4, 282-284 p.
field effect, graphene, mobility, MOSFET, transistor
IdentifiersURN: urn:nbn:se:kth:diva-50507DOI: 10.1109/LED.2007.891668ISI: 000245225300009OAI: oai:DiVA.org:kth-50507DiVA: diva2:495400
QC 201202192012-02-082011-12-062012-02-19Bibliographically approved