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A graphene field-effect device
AMO GmbH, AMICA, Aachen, Germany.
2007 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 28, no 4, 282-284 p.Article in journal (Refereed) Published
Abstract [en]

In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs.

Place, publisher, year, edition, pages
2007. Vol. 28, no 4, 282-284 p.
Keyword [en]
field effect, graphene, mobility, MOSFET, transistor
National Category
Nano Technology
URN: urn:nbn:se:kth:diva-50507DOI: 10.1109/LED.2007.891668ISI: 000245225300009OAI: diva2:495400
QC 20120219Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2012-02-19Bibliographically approved

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Lemme, Max C.
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