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Precision cutting and patterning of graphene with helium ions
Harvard University, Department of Physics.
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2009 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 20, no 45, 455301- p.Article in journal (Refereed) Published
Abstract [en]

We report nanoscale patterning of graphene using a helium ion microscope configured for lithography. Helium ion lithography is a direct-write lithography process, comparable to conventional focused ion beam patterning, with no resist or other material contacting the sample surface. In the present application, graphene samples on Si/SiO(2) substrates are cut using helium ions, with computer controlled alignment, patterning, and exposure. Once suitable beam doses are determined, sharp edge profiles and clean etching are obtained, with little evident damage or doping to the sample. This technique provides fast lithography compatible with graphene, with similar to 15 nm feature sizes.

Place, publisher, year, edition, pages
2009. Vol. 20, no 45, 455301- p.
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Nano Technology
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URN: urn:nbn:se:kth:diva-50520DOI: 10.1088/0957-4484/20/45/455301ISI: 000270904600010OAI: oai:DiVA.org:kth-50520DiVA: diva2:495401
Note
QC 20120216Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2017-12-07Bibliographically approved

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