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Etching of Graphene Devices with a Helium Ion Beam
Harvard University, Department of Physics.
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2009 (English)In: ACS Nano, ISSN 1936-0851, E-ISSN 1936-086X, Vol. 3, no 9, 2674-2676 p.Article in journal (Refereed) Published
Abstract [en]

We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions In a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (02) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.

Place, publisher, year, edition, pages
2009. Vol. 3, no 9, 2674-2676 p.
Keyword [en]
graphene, transistor, helium ion microscope, etching
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-50506DOI: 10.1021/nn900744zISI: 000269988600032OAI: oai:DiVA.org:kth-50506DiVA: diva2:495402
Note
QC 20120222Available from: 2012-02-08 Created: 2011-12-06 Last updated: 2017-12-07Bibliographically approved

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