Etching of Graphene Devices with a Helium Ion Beam
2009 (English)In: ACS Nano, ISSN 1936-0851, Vol. 3, no 9, 2674-2676 p.Article in journal (Refereed) Published
We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions In a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (02) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.
Place, publisher, year, edition, pages
2009. Vol. 3, no 9, 2674-2676 p.
graphene, transistor, helium ion microscope, etching
IdentifiersURN: urn:nbn:se:kth:diva-50506DOI: 10.1021/nn900744zISI: 000269988600032OAI: oai:DiVA.org:kth-50506DiVA: diva2:495402
QC 201202222012-02-082011-12-062012-02-22Bibliographically approved