Change search
ReferencesLink to record
Permanent link

Direct link
Current Status of Graphene Transistors
Harvard University, Department of Physics.
2009 (English)In: Solid State Phenomena, ISSN 1012-0394, Vol. 156, 499-509 p.Article in journal (Refereed) Published
Abstract [en]

This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of graphene manufacturing and metrology methods is followed by an introduction of macroscopic graphene field effect transistors (FETs). The absence of an energy band gap is shown to result in severe shortcomings for logic applications. Possibilities to engineer a band gap in graphene FETs including quantum confinement in graphene Nanoribbons (GNRs) and electrically or substrate induced asymmetry in double and multi layer graphene are discussed. Novel switching mechanisms in graphene transistors are briefly introduced that could lead to future memory devices. Finally, graphene FETs are shown to be of interest for analog radio frequency applications.

Place, publisher, year, edition, pages
2009. Vol. 156, 499-509 p.
Keyword [en]
Graphene, Mobility, MOSFET, Non-volatile memory, Transistor
National Category
Nano Technology
URN: urn:nbn:se:kth:diva-79354DOI: 10.4028/ diva2:495419
QC 20120221Available from: 2012-02-08 Created: 2012-02-08 Last updated: 2012-02-21Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Lemme, Max C.
In the same journal
Solid State Phenomena
Nano Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 62 hits
ReferencesLink to record
Permanent link

Direct link