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Current Status of Graphene Transistors
Harvard University, Department of Physics.
2009 (English)In: Solid State Phenomena, ISSN 1012-0394, E-ISSN 1662-9779, Vol. 156, 499-509 p.Article in journal (Refereed) Published
Abstract [en]

This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of graphene manufacturing and metrology methods is followed by an introduction of macroscopic graphene field effect transistors (FETs). The absence of an energy band gap is shown to result in severe shortcomings for logic applications. Possibilities to engineer a band gap in graphene FETs including quantum confinement in graphene Nanoribbons (GNRs) and electrically or substrate induced asymmetry in double and multi layer graphene are discussed. Novel switching mechanisms in graphene transistors are briefly introduced that could lead to future memory devices. Finally, graphene FETs are shown to be of interest for analog radio frequency applications.

Place, publisher, year, edition, pages
2009. Vol. 156, 499-509 p.
Keyword [en]
Graphene, Mobility, MOSFET, Non-volatile memory, Transistor
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-79354DOI: 10.4028/www.scientific.net/SSP.156-158.499OAI: oai:DiVA.org:kth-79354DiVA: diva2:495419
Note
QC 20120221Available from: 2012-02-08 Created: 2012-02-08 Last updated: 2017-12-07Bibliographically approved

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Publisher's full texthttp://arxiv.org/pdf/0911.4685.pdf

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