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Magnetic junction device useful as, e.g. sensor of magnetic field in magnetic recording, comprises magnetic layers of different anisotropy and center layer of doped magnesium oxide with metal or combination of metals as dopant
KTH, School of Engineering Sciences (SCI), Applied Physics, Nanostructure Physics.ORCID iD: 0000-0003-2339-1692
2006 (English)Patent (Other (popular science, discussion, etc.))
Abstract [en]

The present invention provides a low resistance high magnetoresistance (MR) device comprised of a junction of two magnetic elements separated by a magnesium oxide (MgO) layer doped with such metals as Al and Li. Such device can be used as a sensor of magnetic field in magnetic recording or as a storage element in magnetic random access memory (MRAM). The invention provides a high-MR device possessing a diode function, comprised of a double junction of two outer magnetic elements separated by two MgO insulating layer and a center MgO layer doped with such metals as Al and Li. Such device provides design advantages when used as a storage element in MRAM. The invention provides a three terminal logic device with MR wherein a gate electrode is placed in electrical or physical contact to the center layer of the double tunnel junction.

Place, publisher, year, edition, pages
2006.
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-80607OAI: oai:DiVA.org:kth-80607DiVA: diva2:496529
Patent
SE 531384 C2 (2009-03-17)
Note

US 7679155 B2 (2010-03-16)

Available from: 2012-02-10 Created: 2012-02-10 Last updated: 2013-08-06Bibliographically approved

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Korenivski, Vladislav

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