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Microelectromechanical pressure sensor with integrated circuit and method of manufacturing such
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).ORCID iD: 0000-0001-9552-4234
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).ORCID iD: 0000-0002-0525-8647
2006 (English)Patent (Other (popular science, discussion, etc.))
Abstract [en]

The device according to the invention comprises an integrated device (10) with a pressure sensor (11) having a membrane (20) comprising a high performance material over a cavity (34). The pressure sensor (11) is integrated on a semiconductor substrate (14) that comprises an integrated circuit (15) so that the membrane (20) with the cavity (34) underneath is located at least partly over the integrated circuit (15). The present invention also provides a method for manufacturing an integrated device (10).

Place, publisher, year, edition, pages
2006.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-80737OAI: oai:DiVA.org:kth-80737DiVA: diva2:496690
Patent
WO 2007117198A1
Note

QS 2015

Available from: 2012-02-10 Created: 2012-02-10 Last updated: 2015-01-20Bibliographically approved

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Authority records BETA

Stemme, GöranNiklaus, Frank

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