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Effect of growth temperature on the properties of evaporated tantalum pentoxide thin films on silicon deposited using oxygen radicals
1998 (English)In: Journal of Applied Physics, Vol. 84, 1632-1642 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1998. Vol. 84, 1632-1642 p.
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Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:kth:diva-80987OAI: oai:DiVA.org:kth-80987DiVA: diva2:496986
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NR 20140805Available from: 2012-02-10 Created: 2012-02-10 Last updated: 2012-02-10Bibliographically approved

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Hellberg, P.-E.

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