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Threshold voltage control for PMOSFETs using an undoped epitaxial Si channel and a p+-SixGe1-x gate
2000 (English)In: Solid-State Electronics, Vol. 44, 2085-2088 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2000. Vol. 44, 2085-2088 p.
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Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:kth:diva-80984OAI: oai:DiVA.org:kth-80984DiVA: diva2:497110
Note
NR 20140805Available from: 2012-02-10 Created: 2012-02-10 Last updated: 2012-02-10Bibliographically approved

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Hellberg, P.-E.

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CiteExportLink to record
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